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TIP3055 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce TIP3055
Description  Silicon NPN Power Transistors
PDF  4 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

TIP3055 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  TIP3055 Datasheet HTML 1Page - Inchange Semiconductor Company Limited TIP3055 Datasheet HTML 2Page - Inchange Semiconductor Company Limited TIP3055 Datasheet HTML 3Page - Inchange Semiconductor Company Limited TIP3055 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
TIP3055
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=30mA ;IB=0
60
V
VCEsat-1
Collector-emitter saturation voltage
IC=4A; IB=0.4A
1.1
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A ;IB=3.3A
3.0
V
VBE
Base-emitter on voltage
IC=4A ; VCE=4V
1.5
V
ICEO
Collector cut-off current
VCE=30V; IB=0
0.7
mA
ICER
Collector cut-off current
VCE=70Vdc;RBE=100Ohm
1.0
mA
ICEV
Collector cut-off current
VCE=100Vdc,VBE(off)=1.5Vdc
5.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
5.0
mA
hFE-1
DC current gain
IC=4A ; VCE=4V
20
70
hFE-2
DC current gain
IC=10A ; VCE=4V
5.0
Is/b
Second breakdown collector current
With base forward biased
VCE=30Vdc,t=1.0s,
Nonrepetitive
3.0
A
fT
Transition frequency
IC=0.5A ; VCE=10V
2.5
MHz



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