TIP145T datasheet(1/2 Pages) ISC

No de pièce	TIP145T

Description	isc Silicon PNP Darlington Power Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

TIP145T

DESCRIPTION

·High DC Current Gain-

: hFE = 1000(Min)@ IC= -5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -60V(Min)

·Complement to Type TIP140T

APPLICATIONS

·Designed for general purpose amplifier and low

frequency switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-15

A

IB

B

Base Current- Continuous

-0.5

A

PC

Collector Power Dissipation

@TC=25℃

80

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.56

℃/W

isc Website：www.iscsemi.cn

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