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TIP36A Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TIP36A Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP36/36A/36B/36C DESCRIPTION ・With TO-3PN package ・Complement to type TIP35/35A/35B/35C ・DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS ・Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT TIP36 -40 TIP36A -60 TIP36B -80 VCBO Collector-base voltage TIP36C Open emitter -100 V TIP36 -40 TIP36A -60 TIP36B -80 VCEO Collector-emitter voltage TIP36C Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -25 A ICM Collector current-peak -40 A IB Base current -5 A PC Collector power dissipation TC=25℃ 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.0 ℃/W Fig.1 simplified outline (TO-3PN) and symbol |
Numéro de pièce similaire - TIP36A |
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Description similaire - TIP36A |
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