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MJE18002 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce MJE18002
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE18002 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  MJE18002 Datasheet HTML 1Page - Inchange Semiconductor Company Limited MJE18002 Datasheet HTML 2Page - Inchange Semiconductor Company Limited MJE18002 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
MJE18002
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; L=25mH
450
V
VCEsat-1
Collector-emitter saturation voltage
IC=0.4A ;IB=40mA
TC=125℃
0.5
0.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=1A ;IB=0.2A
TC=125℃
0.5
0.6
V
VBEsat-1
Base-emitter saturation voltage
IC=0.4A ;IB=40mA
1.1
V
VBEsat-2
Base-emitter saturation voltage
IC=1A ;IB=0.2A
1.25
V
0.1
VCES=RatedVCES;
VEB=0
0.5
ICES
Collector cut-off current
VCES=800V
TC=125℃
0.1
mA
ICEO
Collector cut-off current
VCE=RatedVCEO; IB=0
0.1
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
0.1
mA
hFE-1
DC current gain
IC=0.2A ; VCE=5V
14
34
hFE-2
DC current gain
IC=0.4A ; VCE=1V
11
hFE-3
DC current gain
IC=1A ; VCE=1V
6
hFE-4
DC current gain
IC=10mA ; VCE=5V
10
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1.0MHz
6.5
MHz
COB
Collector outoput capacitance
IE=0 ; VCB=10V;f=1.0MHz
35
pF
Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs
ton
Turn-on time
200
300
ns
toff
Turn-off time
VCC=300V ,IC=0.4A
IB1=40mA; IB2=0.2A
1.2
2.5
μs
ton
Turn-on time
85
150
ns
toff
Turn-off time
VCC=300V ,IC=1.0A
IB1=0.2A; IB2=0.5A
1.7
2.5
μs



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