BAS28W datasheet(2/4 Pages) SIEMENS

No de pièce	BAS28W

Description	Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes)

PDF	4 Pages

Scroll/Zoom	100%

Fabricant	SIEMENS [Siemens Semiconductor Group]

Site Internet	http://www.siemens.com/

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2 / 4 page

BAS 28W

Semiconductor Group

Mar-16-1998

Electrical Characteristics at

TA = 25°C, unless otherwise specified.

Parameter

Values

Symbol

Unit

max.

typ.

min.

DC characteristics

V(BR)

Breakdown voltage

I(BR) = 10 µA

Forward voltage

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

715

855

1000

1250

µA

Reverse current

VR = 75 V

Reverse current

VR = 25 V, TA = 150 °C

VR = 75 V, TA = 150 °C

AC characteristics

Diode capacitance

VR = 0 V, f = 1 MHz

Reverse recovery time

IF = 10 mA, IR = 10 mA, RL = 100 Ω,

measured at

IR = 1mA

trr

Test circuit for reverse recovery time

EHN00019

D.U.T.

Oscillograph

Pulse generator:

tp = 100ns, D = 0.05,

tr = 0.6ns, Ri = 50Ω

Oscillograph:

R = 50

Ω, t

r = 0.35ns,

≤ 1pF

Semiconductor Group

1998-11-01

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