BUV26 datasheet(1/3 Pages) ISC

No de pièce	BUV26

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUV26

DESCRIPTION

・

・With TO-220C package

・Low collector saturation voltage

・Fast switching speed

APPLICATIONS

・For use in high frequency and efficiency

converters,switching regulators and motor

control

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings (Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

180

V

VCEO

Collector-emitter voltage

Open base

90

V

VEBO

Emitter-base voltage

Open collector

7

V

IC

Collector current (DC)

14

A

ICM

Collector current (peak)

25

A

IB

Base current

4

A

IBM

Base current (peak)

6

A

Ptot

Total power dissipation

TC=25℃

85

W

Tj

Max.operating junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-mb

Thermal resistance junction to mounting base

1.92

K/W

Numéro de pièce similaire - BUV26

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	BUV26	62Kb / 4P	MEDIUM POWER NPN SILICON TRANSISTOR Jun-1997
STMicroelectronics	BUV26	57Kb / 4P	MEDIUM POWER NPN SILICON TRANSISTOR Feb-2003
ON Semiconductor	BUV26	46Kb / 3P	Switchmode Series NPN Silicon Power Transistor August, 2005 ??Rev. 1
Savantic, Inc.	BUV26	92Kb / 3P	Silicon NPN Power Transistors
ON Semiconductor	BUV26	87Kb / 3P	Switchmode Series NPN Silicon Power Transistor July, 2011 ??Rev. 2

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BUV26 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

BUV26 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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