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BUL810 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BUL810
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUL810 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUL810 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUL810 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUL810
DESCRIPTION
·High Voltage Capability
·High Switching Speed
APPLICATIONS
Designed for use in lighting applications and low cost
swith-mode power supplies.
·Electronic transformer for halogen lamps
·Electronic ballasts for fluorescent lighting
·Switch mode power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-peak ( tp <5 ms )
22
A
IB
B
Base Current-Continuous
5
A
IBM
Base Current-peak ( tp <5 ms )
10
A
PC
Collector Power Dissipation
@TC=25℃
125
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction-Case
1.0
℃/W
Rth j-a
Thermal Resistance,Junction-Ambient
30
℃/W
isc Website：www.iscsemi.cn


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