BUL310 datasheet(1/3 Pages) ISC

No de pièce	BUL310

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUL310

DESCRIPTION

・

・With TO-220C package

・High voltage,high speed

・Wide area of safe operation

APPLICATIONS

・Electronic ballasts for fluorescent lighting

・Switch mode power supplies

・Flyback and forward single transistor

low power converters

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

1000

V

VCEO

Collector-emitter voltage

Open base

500

V

VEBO

Emitter-base voltage

Open collector

9

V

IC

Collector current (DC)

5

A

ICM

Collector current-Peak

tp<5ms

10

A

IB

Base current (DC)

3

A

IBM

Base current-Peak

tp<5ms

4

A

Ptot

Total power dissipation

TC=25℃

75

W

Tj

Maximum operating junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-case

Thermal resistance junction to case

1.65

℃/W

Numéro de pièce similaire - BUL310

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	BUL310	64Kb / 6P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Jan-1999
	BUL310	88Kb / 7P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS Sep-1997
	BUL310	207Kb / 6P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Feb-2002
Savantic, Inc.	BUL310	99Kb / 3P	Silicon NPN Power Transistors
Savantic, Inc.	BUL310	101Kb / 3P	Silicon NPN Power Transistors

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Description similaire - BUL310

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Inchange Semiconductor ...	S2055A	40Kb / 3P	Silicon NPN Power Transistors
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BUL310 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

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