BUL38D datasheet(1/3 Pages) ISC

No de pièce	BUL38D

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUL38D

DESCRIPTION

·

·With TO-220C package

·High voltage ,high speed

·Integrated antiparallel

collector-emitter diode

APPLICATIONS

·Designed for use in lighting applications

and low cost switch-mode power supplies.

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

800

V

VCEO

Collector-emitter voltage

Open base

450

V

VEBO

Emitter-base voltage

Open collector

9

V

IC

Collector current

5

A

ICM

Collector current-Peak (tp<5 ms)

10

A

IB

Base current

2

A

IBM

Base current-Peak (tp<5 ms)

4

A

PT

Total power dissipation

TC=25℃

80

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-C

Thermal resistance from junction to case

1.56

℃/W

Numéro de pièce similaire - BUL38D

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	BUL38D	68Kb / 6P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Jun-2000
STMicroelectronics	BUL38D	229Kb / 7P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Feb-2003
Suntac Electronic Corp.	BUL38D	98Kb / 3P	NPN POWER TRANSISTORS
SYC Electronica	BUL38D	127Kb / 5P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STMicroelectronics	BUL38D	229Kb / 7P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Feb-2003

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BUL38D Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

BUL38D Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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