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BUH515 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUH515 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUH515 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A 1.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.25A 1.3 V ICES Collector cut-off current VCE=1500V; VBE=0 Tj=125℃ 0.2 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=5A ; VCE=5V 6 12 Switching times ts Storage time 2.7 3.9 μs tf Fall time IC=5A;IB1=1.25A;IB2=2.5A; VCC=400V 190 280 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 2.5 ℃/W |
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