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BU2507AX Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU2507AX Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2507AX DESCRIPTION ·High Switching Speed ·High Voltage APPLICATIONS ·Designed for use in horizontal deflection circuits of coluor TV receivers and computer monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCESM Collector-Emitter Voltage VBE=0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continuous 8 A ICM Collector Current-peak 15 A IB B Base Current-Continuous 4 A IBM Base Current-peak 6 A PC Collector Power Dissipation @TC=25℃ 45 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.8 K/W isc Website:www.iscsemi.cn |
Numéro de pièce similaire - BU2507AX |
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Description similaire - BU2507AX |
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