BU508A datasheet(1/3 Pages) ISC

No de pièce	BU508A

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU508A

DESCRIPTION

・With TO-3PN package

・High voltage

・High speed switching

APPLICATIONS

・For use in horizontal deflection circuits of

large screen colour TV receivers.

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

1200

V

VCEO

Collector-emitter voltage

Open base

700

V

VEBO

Emitter-base voltage

Open collector

10

V

IC

Collector current (DC)

8

A

ICM

Collector current (Pulse)

15

A

PC

Collector power dissipation

TC=25℃

125

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance junction case

1.0

℃/W

Fig.1 simplified outline (TO-3PN) and symbol

Numéro de pièce similaire - BU508A

Fabricant	No de pièce	Fiches technique	Description
Mospec Semiconductor	BU508A	162Kb / 4P	POWER TRANSISTORS(5A,1500V,125W)
STMicroelectronics	BU508A	78Kb / 8P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS Nov-1999
Wing Shing Computer Com...	BU508A	70Kb / 1P	NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)
STMicroelectronics	BU508A	240Kb / 8P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS Apr-2002
Savantic, Inc.	BU508A	136Kb / 3P	Silicon NPN Power Transistors

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BU508A Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

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