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BU505D Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BU505D
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU505D Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  BU505D Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU505D Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU505D
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V(Min.)
·High Switching Speed
APPLICATIONS
·Designed for use in horizontal deflection circuits of color TV
receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage-VBE=0
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2.5
A
ICM
Collector Current-Peak
4
A
IB
B
Base Current-Continuous
2
A
IBM
Base Current-Peak
4
A
PC
Collector Power Dissipation
@ TC=25℃
75
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.67
℃/W
isc Website：www.iscsemi.cn


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