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BU103A Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BU103A
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU103A Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU103A
DESCRIPTION
·Continuous Collector Current-IC= 1A
·Collector Power Dissipation-
: PC= 30W @TC= 25℃
APPLICATIONS
·Designed for TV vertical applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCER
Collector-Emitter Voltage RBE= 220Ω
120
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
1
A
PC
Collector Power Dissipation@TC=25℃
30
W
TJ
Junction Temperature
200
Tstg
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
6.0
℃/W
isc Website:www.iscsemi.cn


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