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BDY80 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BDY80
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDY80 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  BDY80 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BDY80 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDY80
DESCRIPTION
·Continuous Collector Current-IC= 4A
·Collector Power Dissipation-
: PC= 36W @TC= 25℃
·Complement to Type BDY82
APPLICATIONS
·Designed for general purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEX
Collector-Emitter Voltage VBE= -1.5V
40
V
VCEO
Collector-Emitter Voltage
35
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
4
A
IB
B
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25℃
36
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.5
℃/W
isc Website：www.iscsemi.cn


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