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BDX91 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BDX91
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDX91 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDX91/93/95
DESCRIPTION
·Collector Current -IC= 10A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min)- BDX91
80V(Min)- BDX93
100V(Min)- BDX95
·Complement to Type BDX92/94/96
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX91
60
BDX93
80
VCBO
Collector-Base
Voltage
BDX95
100
V
BDX91
60
BDX93
80
VCEO
Collector-Emitter
Voltage
BDX95
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
PC
Collector Power Dissipation
@ TC=25℃
90
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.94
℃/W
isc Website：www.iscsemi.cn


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