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BDX53F Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BDX53F
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDX53F Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDX53F
DESCRIPTION
·Collector Current -IC= 8A
·High DC Current Gain-
: hFE= 500(Min)@ IC= 2A
·Complement to Type BDX54F
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCER
Collector-Emitter Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
12
A
IB
B
Base Current-Continuous
0.2
A
PC
Collector Power Dissipation
@ TC=25℃
60
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.08
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
70
℃/W
isc Website：www.iscsemi.cn


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