BDW63 datasheet(1/2 Pages) ISC

No de pièce	BDW63

Description	isc Silicon NPN Darlington Power Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

BDW63/A/B/C/D

DESCRIPTION

·Collector Current -IC= 6A

·High DC Current Gain-hFE= 750(Min.)@ IC= 2A

·Complement to Type BDW64/A/B/C/D

APPLICATIONS

·Designed for audio output stages and general amplifier

and switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDW63

45

BDW63A

60

BDW63B

80

BDW63C

100

VCBO

Collector-Base

Voltage

BDW63D

120

V

BDW63

45

BDW63A

60

BDW63B

80

BDW63C

100

VCEO

Collector-Emitter

Voltage

BDW63D

120

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

6

A

IB

B

Base Current-Continuous

0.1

A

Collector Power Dissipation

@ Ta=25℃

2

PC

Collector Power Dissipation

@ TC=25℃

60

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

2.08

℃/W

Rth j-c

Thermal Resistance, Junction to Case

62.5

℃/W

isc Website：www.iscsemi.cn

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