BD906 datasheet(1/2 Pages) ISC

No de pièce	BD906

Description	isc Silicon PNP Power Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD906

isc Website：www.iscsemi.cn

DESCRIPTION

·DC Current Gain -

: hFE = 40(Min.)@ IC= -0.5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -45V(Min)

·Complement to Type BD905

APPLICATIONS

·Designed for use in general purpose power amplifier and

switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-45

V

VCEO

Collector-Emitter Voltage

-45

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-15

A

ICM

Collector Current-Peak

-20

A

IB

B

Base Current

-5

A

PC

Collector Power Dissipation

@ TC=25℃

90

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.38

℃/W

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