| Moteur de recherche de fiches techniques de composants électroniques |
|
BD736 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
BD736 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD736 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -35 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -35 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -0.6 V VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -1V -1.1 V ICES Collector Cutoff Current VCE= -35V; VBE= 0 -0.2 mA hFE-1 DC Current Gain IC= -20mA; VCE= -4V 40 hFE-2 DC Current Gain IC= -2A; VCE= -1V 40 isc Website:www.iscsemi.cn 2 |
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |