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BD707 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD707 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD707 BD709 BD711 DESCRIPTION ・With TO-220C package ・The BD707 and BD711are respectively complement to type BD708 and BD712 APPLICATIONS ・Intented for use in power linear and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT BD707 60 BD709 80 VCBO Collector-base voltage BD711 Open emitter 100 BD707 60 BD709 80 VCEO Collector-emitter voltage BD711 Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 12 A ICM Collector current-Pulse 18 A IB Base current 5 A PT Total dissipation TC=25℃ 75 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.67 ℃/W |
Numéro de pièce similaire - BD707 |
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Description similaire - BD707 |
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