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BD546 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce BD546
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD546 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD546/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BD546
-40
BD546A
-60
BD546B
-80
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BD546C
IC= -30mA ;IB=0
B
-100
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -5A; IB= -0.625A
B
-0.8
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -10A; IB= -2A
-1.0
V
VBE(on)
Base-Emitter On Voltage
IC= -10A; VCE= -4V
-1.8
V
BD546
VCE= -40V; VBE= 0
BD546A
VCE= -60V; VBE= 0
BD546B
VCE= -80V; VBE= 0
ICES
Collector
Cutoff Current
BD546C
VCE= -100V; VBE= 0
-0.4
mA
BD546/A
VCE= -30V; IB= 0
B
ICEO
Collector
Cutoff Current
BD546B/C
VCE= -60V; IB= 0
B
-0.7
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-1.0
mA
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
60
hFE-2
DC Current Gain
IC= -5A; VCE= -4V
25
hFE-3
DC Current Gain
IC= -10A; VCE= -4V
10
Switching times
ton
Turn-on Time
0.4
μs
toff
Turn-off Time
IC= -6A; IB1= -IB2= -0.6A;
RL= 5Ω; VBE(off)= 4V
0.7
μs
isc Website：www.iscsemi.cn
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