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BD227 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BD227
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD227 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD227/229/231
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= -0.15A
·Complement to Type BD226/228/230
APPLICATIONS
·Designed for use in driver stages in television circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD227
-45
BD229
-60
VCBO
Collector-Base Voltage
BD231
-100
V
BD227
-45
BD229
-60
VCEO
Collector-Emitter Voltage
BD231
-80
V
BD227
-45
BD229
-60
VCER
Collector-Emitter
Voltage(RBE= 1kΩ)
BD231
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
ICM
Collector Current-Peak
-3.0
A
PC
Collector Power Dissipation
@ TC≤62℃
12.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
7
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
100
℃/W
isc Website：www.iscsemi.cn


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