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2SD2580 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2580 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2580 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 800 V VCEsat Collector-emitter saturation voltage IC=8 A;IB=1.6A 5 V VBEsat Base-emitter saturation voltage IC=8 A;IB=1.6A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA ICES Collector cut-off current VCE=1500V ;RBE=0 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE-1 DC current gain IC=8A ; VCE=5V 5 8 hFE-2 DC current gain IC=1A ; VCE=5V 15 30 tf Fall time IC=6A;RL=33.3Ω IB1=1.2A;-IB2=2.4A;VCC=200V 0.3 μs |
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