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2SD2524 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2524 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2524 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 2A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 2A B 1.5 V VCB= 1000V; IE= 0 50 μA ICBO Collector Cutoff Current VCB= 1700V; IE= 0 1.0 mA hFE DC Current Gain IC= 6A; VCE= 5V 4 10 VECF C-E Diode Forward Voltage IF= 8A 2.0 V fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 3 MHz Resistive Load ts Storage Time 12 μs tf Fall Time IC= 6A, IB(end)= 2A, Lleak= 5μH 0.8 μs isc Website:www.iscsemi.cn 2 |
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