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2SD2257 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2257 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2257 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 100 V VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=1.5mA 1.5 V VBEsat Base-emitter saturation voltage IC=1.5A ;IB=1.5mA 2.0 V ICBO Collector cut-off current VCB=100V ;IE=0 10 μA IEBO Emitter cut-off current VEB=8V; IC=0 0.8 4.0 mA hFE-1 DC current gain IC=1A ; VCE=2V 2000 hFE-2 DC current gain IC=2A ; VCE=2V 2000 VECF Diode forward voltage IE=1A 2.0 V Switching times ton Turn-on time 0.5 μs ts Storage time 2.0 μs tf Fall time IB1=-IB2=1.5mA VCC=30V ,RL=20Ω Duty cycle≤1% 0.5 μs |
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