2SD1772 datasheet(1/4 Pages) ISC

No de pièce	2SD1772

Description	Silicon NPN Power Transistors

PDF	4 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1772 2SD1772A

DESCRIPTION

・

・With TO-220Fa package

・Complement to type 2SB1192/1192A

・Large collector power dissipation

APPLICATIONS

・For power amplification

・For TV vertical deflection output

PINNING

DESCRIPTION

1

Base

2

Collector

3

Emitter

ABSOLUTE MAXIMUM RATINGS AT Ta=25℃

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

200

V

2SD1772

150

VCEO

Collector-emitter voltage

2SD1772A

Open base

180

V

VEBO

Emitter-base voltage

Open collector

6

V

IC

Collector current (DC)

1

A

ICM

Collector current-peak

2

A

TC=25℃

25

PC

Collector power dissipation

Ta=25℃

2

w

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-220Fa) and symbol

Numéro de pièce similaire - 2SD1772

Fabricant	No de pièce	Fiches technique	Description
Panasonic Semiconductor	2SD1772	45Kb / 2P	Silicon NPN triple diffusion planar type
Savantic, Inc.	2SD1772	136Kb / 4P	Silicon NPN Power Transistors
Savantic, Inc.	2SD1772	137Kb / 4P	Silicon NPN Power Transistors
Panasonic Semiconductor	2SD1772A	45Kb / 2P	Silicon NPN triple diffusion planar type
Savantic, Inc.	2SD1772A	136Kb / 4P	Silicon NPN Power Transistors

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2SD1772 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

2SD1772 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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