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2SD1692 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2SD1692
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1692 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1692
DESCRIPTION
·Collector–Emitter Sustaining Voltage—
: VCEO(SUS) = 100V(min.)
·DC Current Gain—
: hFE = 2000(Min.) @ IC= 1.5 A
·Complement to Type 2SB1149
APPLICATIONS
·Designed for general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
±3
A
ICM
Collector Current-Peak
±5
A
Collector Power Dissipation
Ta=25℃
1.3
PC
Collector Power Dissipation
TC=25℃
15
W
Ti
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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