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2SD1044 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2SD1044
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1044 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1044
DESCRIPTION
·High DC Current Gain
: hFE= 700(Min.)@ IC= 1A, VCE= 4V
·High Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 80V(Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCER
Collector-Emitter Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
IB
B
Base Current- Continuous
3
A
PC
Collector Power Dissipation
@TC=25℃
60
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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