2SD864 datasheet(1/2 Pages) ISC

No de pièce	2SD864

Description	isc Silicon NPN Darlington Power Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

2SD864

DESCRIPTION

·High DC Current Gain-

: hFE = 1000(Min)@ IC= 1.5A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO = 120V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = 1.5V(Max)@ IC= 1.5A

·Complement to Type 2SB765

APPLICATIONS

·Medium speed and power switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

3

A

ICM

Collector Current-Peak

6

A

PC

Collector Power Dissipation

TC=25℃

30

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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