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2SD833 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2SD833
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD833 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD833
DESCRIPTION
·High DC Current Gain-
: hFE= 4000(Min) @IC= 3A
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.) @ IC= 3A
APPLICATIONS
·Audio power amplifiers
·Relay& solenoid drivers
·Motor controls
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO(SUS)
Collector-Emitter Voltage
50
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IB
B
Base Current-Continuous
0.2
A
PC
Collector Power Dissipation
@ TC=25℃
40
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
3.0
℃/W
isc Website：www.iscsemi.cn


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