| Moteur de recherche de fiches techniques de composants électroniques |
|
2SD582 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SD582 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD582 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 140 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A B 1.5 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 160V; IE= 0 10 μA hFE-1 DC Current Gain IC= 1A; VCE= 5V 35 200 hFE-2 DC Current Gain IC= 7A; VCE= 5V 20 hFE-1 Classifications A B C 35-70 60-120 100-200 isc Website:www.iscsemi.cn |
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |