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2SC5803 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5803 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5803 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.5 V ICES Collector Cutoff Current VCE= 1400V; VBE= 0 1.0 mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 15 40 hFE-2 DC Current Gain IC= 8A; VCE= 5V 5.5 8.5 Switching Times tstg Storage Time 4.0 μs tf Fall Time IC= 7A, IB1= 1.4A; IB2= -2.8A; VCC= 200V; RL= 28.6Ω 0.3 μs isc Website:www.iscsemi.cn 2 |
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