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2SC5280 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5280 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC5280 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=6A;IB=1.5 A 5 V VBEsat Base-emitter saturation voltage IC=6A;IB=1.5 A 1.0 1.5 V V(BR)EBO Emitter-base breakdown voltage IE=400mA;IC=0 5 V IEBO Emitter cut-off current VEB=5V; IC=0 72 250 mA ICBO Collector cut-off current VCB=1500V; IE=0 1 mA hFE-1 DC current gain IC=1 A ; VCE=5V 10 35 hFE-2 DC current gain IC=6A ; VCE=5V 4 8.5 fT Transition frequency IE=0.1A ; VCE=10V 2 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 115 pF VF Diode forward voltage IF=6A 1.4 1.8 V Switching times tstg Storage time 4 6 μs tf Fall time ICP=6A;IB1(end)=1.2A fH=31.5kHz 0.2 0.5 μs |
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