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2SC5149 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5149 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5149 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 400mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.3A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.3A B 1.5 V ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 66 200 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 25 hFE-2 DC Current Gain IC= 5A ; VCE= 5V 3.8 8.0 VECF C-E Diode Forward Voltage IF= 5A 1.8 V fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 2 MHz COB Output Capacitance IE=0 ; VCB=10V; ftest=1.0MHz 110 pF Switching times tstg Storage Time 6.0 μs tf Fall Time ICP= 5A, IB1(end)= 1.1A ; fH= 31.5kHz 0.5 μs isc Website:www.iscsemi.cn 2 |
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