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2SC4757 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce 2SC4757
Description  isc Silicon NPN Power Transistor
PDF  4 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC4757 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC4757 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC4757 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SC4757 Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SC4757 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4757
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA ; IB= 0
600
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1.2A
B
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 1.2A
B
1.5
V
ICBO
Collector Cutoff Current
VCB= 1500V ; IE= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
10
μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
8
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
4
8
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 10V
1
3
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1.0MHz
175
pF
Switching times Resistive load
tstg
Storage Time
2.5
μs
tf
Fall Time
ICP= 5A , IB1= 1A ; IB2= -2A
RL=39Ω
0.2
μs
isc Website：www.iscsemi.cn
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