2SC4460 datasheet(2/4 Pages) ISC

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC4460

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-base breakdown voltage

IC=1mA; IE=0

800

V(BR)CEO

Collector-emitter breakdown voltage

IC=5mA; RBE=∞

500

V(BR)EBO

Emitter-base breakdown voltage

IE=1mA; IC=0

VCEX(SUS)

Collector-emitter sustaining voltage

IC=5A;IB1=2A;

IB2=-2A;L=500μH

500

VCEsat

Collector-emitter saturation voltage

IC=6A;IB=1.2 A

1.0

VBEsat

Base-emitter saturation voltage

IC=6A;IB=1.2A

1.5

ICBO

Collector cut-off current

VCB=500V; IE=0

μA

IEBO

Emitter cut-off current

VEB=5V; IC=0

μA

hFE-1

DC current gain

IC=1.2A ; VCE=5V

hFE-2

DC current gain

IC=6A ; VCE=5V

Transition frequency

IC=1.2A ; VCE=10V

MHz

COB

Output capacitance

VCB=10V;f=1MHz

160

Switching times

ton

Turn-on time

0.5

μs

tstg

Storage time

3.0

μs

Fall time

IC=5IB1=-2.5IB2=7A;

RL=28.6Ω

VCC=200V

0.3

μs

hFE-1 classifications

15-30

20-40

30-50

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