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2SC4125 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4125 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4125 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 130 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 8A ; VCE= 5V 4 6 VECF C-E Diode Forward Voltage IF= 10A 2.0 V Switching Times ts Storage Time 3.0 μs tf Fall Time IC= 6A, IB1= 1.2A; IB2= -2.4A 0.1 0.2 μs isc Website:www.iscsemi.cn 2 |
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