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2SC3975 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3975 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3975 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 15 hFE-2 DC Current Gain IC= 6A; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; f= 1MHz 20 MHz Switching Times ton Turn-on Time 1.0 μs ts Storage Time 3.0 μs tf Fall Time IC= 6A; IB1= 1.2A; IB2= -2.4A; VCC= 200V 0.3 μs isc Website:www.iscsemi.cn |
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