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2SC3685 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3685 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3685 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 800 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=1A 5 V VBEsat Base-emitter saturation voltage IC=4A ;IB=1A 1.5 V ICES Collector cut-off current VCE=1500V; RBE=0 1 mA IEBO Emitter cut-off current VEB=4V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V 8 Switching times tstg Storage time 3.0 μs tf Fall time IC=4A;IB1=0.8A; IB2=-1.6A V CC=200V 0.1 0.2 μs |
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