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2SC3680 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3680 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3680 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 800 V VCEsat Collector-emitter saturation voltage IC=3A ,IB=0.6A 0.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.6A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=3A ; VCE=4V 10 30 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 105 pF fT Transition frequency IC=2A ; VCE=12V 6 MHz Switching times ton Turn-on time 1.0 μs tstg Storage time 5.0 μs tf Fall time IC=3A;IB1=0.45A; IB2=-1.5A;RL=83Ω VCC=250V 1.0 μs |
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