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2SC1913A Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC1913A Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION ・With TO-220 package ・Complement to type 2SA913/913A ・Large collector power dissipation ・High VCEO APPLICATIONS ・Audio frequency high power driver PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC1913 150 VCBO Collector-base voltage 2SC1913A Open emitter 180 V 2SC1913 150 VCEO Collector-emitter voltage 2SC1913A Open base 180 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1 A ICM Collector current-peak 1.5 A PC Collector power dissipation TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220) and symbol |
Numéro de pièce similaire - 2SC1913A |
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Description similaire - 2SC1913A |
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