| Moteur de recherche de fiches techniques de composants électroniques |
|
2SB1658 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SB1658 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1658 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -30 V VCEsat-1 Collector-emitter saturation voltage IC=-1A; IB=-50mA -0.15 V VCEsat-2 Collector-emitter saturation voltage IC=-2A; IB=-100mA -0.25 V VCEsat-3 Collector-emitter saturation voltage IC=-4A; IB=-200mA -0.5 V VBEsat Base-emitter saturation voltage IC=-1A; IB=-100mA -1.5 V ICBO Collector cut-off current VCB=-30V; IE=0 -0.1 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 μA hFE-1 DC current gain IC=-1A ; VCE=-2V 150 600 hFE-2 DC current gain IC=-4A ; VCE=-2V 50 fT Transition frequency IC=-50mA ; VCE=-10V 95 MHz COB Collector output capacitance IE=0;f=1MHz ; VCB=-10V 100 pF |
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |