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2SB1569 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1569 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1569 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 B -120 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -1.5 V μA ICBO Collector Cutoff Current VCB= -120V; IE= 0 -1.0 μA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -1.0 hFE DC Current Gain IC= -1A; VCE= -5V 100 200 fT Current-Gain—Bandwidth Product IC= -0.1A;VCE= -5V; ftest= 30MHz 50 MHz COB Collector Output Capacitance IE= 0; VCE= -10V; ftest= 1MHz 30 pF isc Website:www.iscsemi.cn 2 |
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