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SW634 Fiches technique(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

No de pièce SW634
Description  N-channel MOSFET
PDF  7 Pages
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Fabricant  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Site Internet  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW634 Fiches technique(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 8. On resistance variation
vs. junction temperature
Fig. 10. Maximum safe operating area
Fig. 11. Transient thermal response curve
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
،ط Notes :
1. V
GS
= 0 V
2. I
D
= 250 ¥ىA
T
J
, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
،ط Notes :
1. V
GS
= 10 V
2. I
D
= 4.5 A
T
J
, Junction Temperature [
oC]
25
50
75
100
125
150
0
2
4
6
8
10
T
C'
Case Temperature [
o
C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
،ط Notes :
1. Z
¥èJC
(t) = 1.60 ،ة/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1
, Square Wave Pulse Duration [sec]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
،ط Notes :
1. T
C
= 25
oC
2. T
J
= 150
oC
3. Single Pulse
V
DS
, Drain-Source Voltage [V]
SW634
SAMWIN
4/7



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