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SW30N06 Fiches technique(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

No de pièce SW30N06
Description  N-channel MOSFET
PDF  7 Pages
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Fabricant  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Site Internet  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW30N06 Fiches technique(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

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Fig. 9. Maximum drain current vs.
case temperature.
Fig. 8. On resistance variation
vs. junction temperature
Fig. 10. Maximum safe operating area
Fig. 11. Transient thermal response curve
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
*. Notes :
1. V
GS
= 0 V
2. I
D
= 250 uA
T
J
, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*. Notes :
1. V
GS
= 10 V
2. I
D
= 15 A
T
J
, Junction Temperature [
oC]
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
100us
DC
10 ms
1 ms
Operation in This Area
is Limited by R
DS(on)
*. Notes :
1. T
C
= 25
oC
2. T
J
= 175
oC
3. Single Pulse
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
T
C'
Case Temperature [
oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
*. Notes :
1. Z
¥èJC
(t) = 1.78
OC/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1
, Square Wave Pulse Duration [sec]
t
1
t
2
SAMWIN
4/7
SW30N06



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