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2SB1020 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1020 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1020 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -100 V VCEsat-1 Collector-emitter saturation voltage IC=-3A ;IB=-6mA -0.95 -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-7A ;IB=-14mA -1.3 -2.0 V VBEsat Base-emitter saturation voltage IC=-3A ;IB=-6mA -1.55 -2.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -4.0 mA hFE-1 DC current gain IC=-3A ; VCE=-3V 2000 15000 hFE-2 DC current gain IC=-7A ; VCE=-3V 1000 Switching times ton Turn-on time 0.8 μs tstg Storage time 2.0 μs tf Fall time IB1=-IB2=-6mA VCC=-45V ,RL=15Ω 2.5 μs |
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