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2SB826 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce 2SB826
Description  Silicon PNP Power Transistors
PDF  4 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB826 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SB826 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB826 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SB826 Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SB826 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon PNP Power Transistors
2SB826
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;RBE=∞
-50
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-6A;IB=-0.3A
-0.5
V
ICBO
Collector cut-off current
VCB=-40V;IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
70
280
hFE-2
DC current gain
IC=-5A ; VCE=-2V
30
fT
Transition frequency
IC=-1A ; VCE=-5V
10
MHz
Switching times
ton
Turn-on time
0.2
μs
ts
Storage time
0.1
μs
tf
Fall time
IC=5.0A ;IB1=- IB2=0.5A
0.4
μs
hFE-1 classifications
Q
R
S
70-140
100-200
140-280



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