2SB795 datasheet(1/3 Pages) ISC

No de pièce	2SB795

Description	Silicon PNP Power Transistors

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB794 2SB795

DESCRIPTION

・With TO-126 package

・DARLINGTON

・High DC current gain

・Low collector saturation voltage

・Complement to type 2SD985 2SD986

APPLICATIONS

・For use in operating from IC without

predriver ,such as hammer driver

PINNING(See Fig.2)

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2SB794

-60

VCBO

Collector-base voltage

2SB795

Open emitter

-80

V

2SB794

-60

VCEO

Collector-emitter voltage

2SB795

Open base

-80

V

VEBO

Emitter-base voltage

Open collector

-8

V

IC

Collector current (DC)

-1.5

A

ICM

Collector current-peak

-3.0

A

Ta=25℃

1.0

PD

Total power dissipation

TC=25℃

10

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

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