| Moteur de recherche de fiches techniques de composants électroniques |
|
2SB778 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SB778 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB778 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.5 V VBE Base-emitter on voltage IC=-5A;VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-5V 55 160 fT Transition frequency IC=-1A ; VCE=-5V 10 MHz COB Collector output capacitance IE=0;f=1MHz;VCB=-10V 280 pF hFE Classifications R O 55-110 80-160 |
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |